1 QID6508001 preliminary description: powerex hvigbts feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clear - ance distance for many demanding applications like medium voltage drives and auxiliary traction applications. features: ? -40 t o 150c extended t emperature range ? 1 00% dynamic tested ? 1 00% partial discharge tested ? a dvanced mitsubishi r-series chip t echnology ? alumin um nitride (aln) ceramic substr ate for low thermal impedance ? c omplementary line-up in expanding curr ent ranges to mitsubishi hvigbt p ower modules ? c opper baseplate ? cr eepage and clearance meet iec 60077 -1 ? r ugged swsoa and rrsoa applications: ? high voltage power supplies ? medium v oltage drives ? mot or drives ? traction outline drawing and circuit diagram dimensions inches millimeters a 5.51 1 40.0 b 2.87 73.0 c 1 .89 48.0 d 4.880.0 1 1 24.00.25 e 2.240.0 1 57 .00.25 f 1 .18 30.0 g 0.43 1 1.0 h 1 .07 27 .15 j 0.20 5.0 k 1 .65 42.0 dimensions inches millimeters l 0.690.0 1 1 7.50.25 m 0.38 9.75 n 0.20 5.0 p 0.22 5.5 q 1 .44 36.5 r 0.1 6 4.0 s m6 metr ic m6 t 0.63 min. 1 6.0 min. u 0.1 1 x 0.02 2.8 x 0.5 v 0.28 dia. 7 .0 dia. 3 2 1 8 7 6 n j (2typ) s nuts (3typ) h h v (4typ) m g (3typ) r (deep) eb k (3typ) l (2typ) p u (5typ) t (screwing depth) q 5 4 1 2 3 4 5 6 7 8 f f d a c dual igbt hvigbt module 85 amperes/6500 volts 11 /14 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com information presented is based upon manufacturers testing and projected capabilities.this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QID6508001 units junction temperature t j -40 t o +150 c storage temperature t stg -40 t o +125 c collector-emitter voltage (v ge = 0v) v ces t j = -40c 5800 v olts t j = +25c 6300 v olts t j = +125c 6500 v olts gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current (t c = 110c) i c 85 amper es peak collector current (pulse) i cm 170 *2 amperes diode forward current (t c = 102c) *1 i f 85 amper es diode forward surge current (pulse) *1 i fm 170 *2 amperes maximum collector dissipation p c 1 100 watts (t c = 25c, igbt part, t j(max) 150c) mounting torque, m6 terminal screws 44 in-lb mounting torque, m6 mounting screws 44 in-lb module weight (typical) 900 gr ams isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 9.0 kv olts partial discharge q pd 1 0 pc (v1 = 6900 v rms , v2 = 5200 v rms , f = 60hz (acc. to iec 1287)) maximum short-circuit pulse width, t psc 1 0 s (v cc 4500v, v ge = 15v, t j = 125c) electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol t est conditions min. t yp. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v, t j = 25c 3 ma v ce = v ces , v ge = 0v, t j = 125c 3 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 13ma, v ce = 10v 5.8 6.3 6.8 v olts collector-emitter saturation voltage v ce(sat) i c = 85a, v ge = 15v, t j = 25c 3.8 *3 v olts i c = 85a, v ge = 15v, t j = 125c 4.8 5.6 v olts total gate charge q g v cc = 3600v, i c = 85a, v ge = 15v 1 .05 c emitter-collector voltage *1 v ec i e = 85a, v ge = 0v, t j = 25c 3.3 v olts i e = 85a, v ge = 0v, t j = 125c 3.4 4.2 v olts *1 represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *2 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *3 pulse width and repetition rate should be such that device junction temperature rise is negligible. QID6508001 dual igbt hvigbt module 85 amperes/6500 volts preliminary powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 2 information presented is based upon manufacturers testing and projected capabilities.this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3 electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol t est conditions min. t yp. max. units input capacitance c ies 15 nf output capacitance c oes v ge = 0v, v ce = 10v 0.95 nf reverse transfer capacitance c res f = 1 00khz 0.44 nf resistive t urn-on delay time t d(on) v cc = 3600v, i c = 85a, tbd s load rise t ime t r v ge = 15v, tbd s switching t urn-off delay time t d(off) r g(on) = 30?, r g(off) = 300?, tbd s times f all time t f inductiv e load tbd s turn-on switching energy e on t j = 125c, i c = 85a, v ge = 15v, 460 mj turn-off switching energy e off r g(on) = 30?, r g(off) = 300?, 500 mj v cc = 3600v, inductive load diode reverse recovery time *1 t rr v cc = 3600v, i e = 85a, 0.7 s diode reverse recovery charge *1 q rr v ge = 15v, r g(on) = 30?, 1 00 *3 c diode reverse recovery energy e rec inductiv e load, t j = 125c 200 mj stray inductance (c1-e2) l sce 60 nh lead resistance terminal-chip r ce 0.8 m? thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol t est conditions min. t yp. max. units thermal resistance, junction to case *4 r th(j-c) q p er igbt 0.1 00 c/w thermal resistance, junction to case *4 r th(j-c) d p er fwdi 0.175 c/w contact thermal resistance, case to fin r th(c-f) p er module, 0.0 18 c/w ther mal grease applied, grease = 1w/mk comparative tracking index cti 600 clearance distance in air d a(t-t) 1 9 mm (terminal to terminal) creepage distance along surface d s(t-t) 54 mm (terminal to terminal) *1 represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *3 pulse width and repetition rate should be such that device junction temperature rise is negligible. *4 t c measurement point is just under the chips. QID6508001 dual igbt hvigbt module 85 amperes/6500 volts preliminary powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 2 information presented is based upon manufacturers testing and projected capabilities.this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 emitter current, i e , (amperes) 0 21 43 5 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics typical) collector-emitter saturation voltage, v ce(sat) , (volts)) collector-emitter saturation voltage characteristics (typical) 0 2 4 6 8 collector-emitter voltage, v ce , (volts) output characteristics (typical) 0 2 4 6 8 0 150 50 100 25 75 125 0 150 50 100 25 75 125 0 150 50 100 25 75 125 0 150 50 100 25 75 125 gate-emitter voltage, v ge , (volts) transfer characteristics (typical) 0 16 12 4 8 collector current, i c , (amperes) collector current, i c , (amperes) collector current, i c , (amperes) v ce = v ge t j = 25c t j = 125c v ge = 15v 10 11 13 t j = 125 c t j = 25c t j = 125c v ge = 15v t j = 25c t j = 125c QID6508001 dual igbt hvigbt module 85 amperes/6500 volts preliminary powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 2 information presented is based upon manufacturers testing and projected capabilities.this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5 capacitance, c ies , c oes , c res , (nf) gate emitter voltage, v ge , (volts) switching energies, e on , e off , e rec , (j) switching energies, e on , e rec , (j) collector-emitter voltage, v ce , (volts) capacitance characteristics (typical) 1.0 100 100 10 1.0 0.1 10 0.1 gate charge, q g , ( c) 20 0 0.6 0.2 0.4 0.8 1.0 15 10 5 0 -5 -10 -15 gate charge characteristics (typical) 1.2 collector current, i c , (amperes) 1.4 1.2 1.0 0.8 0.4 0.2 75 25 50 100 125 0.6 0 1.2 1.0 0.8 0.4 0.2 0.6 0 half-bridge switching energy characteristics (typical) 150 gate resistor, r g , (ohm) half-bridge switching energy characteristics (typical) v ge = 0v t j = 25c f = 100khz c ies c oes c res v ce = 3600v i c = 85a t j = 25c 0 60 20 40 80 100 0 v cc = 3600v, v ge = 15v, r g(on) = 30 , r g(off) = 300 , l s = 150nh, t j = 125c inductive load v cc = 3600v, i c = 85a, v ge = 15v, l s = 150nh, t j = 125c, inductive load e on e off e rec e on e rec QID6508001 dual igbt hvigbt module 85 amperes/6500 volts preliminary powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 2 information presented is based upon manufacturers testing and projected capabilities.this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6 collector current, i c , (amperes) switching times, ( s) reverse recovery time, t rr , ( s) reverse recovery current, i rr , (amperes) collector-emitter voltage, v ce , (volts) reverse bias safe operating area (rbsoa) 275 0 220 170 110 55 0 2000 4000 6000 8000 collector current, i c , (amperes) half-bridge switching time characteristics (typical) 100 10 10 100 1 0.1 0.01 1000 emitter current, i e , (amperes) free-wheel diode reverse recovery (typical) 100 100 10 1 0.1 1000 100 10 1.0 1000 switching energies, e off , (j) 1.2 1.0 0.8 0.4 0.2 0.6 0 gate resistor, r g , (ohm) half-bridge switching energy characteristics (typical) tbd 300 100 200 400 500 0 v cc 4500v, v ge = 15v, r g(off) = 300 , t j = 125c 10 t rr i rr v cc = 3600v, i c = 85a, v ge = 15v, l s = 150nh, t j = 125c, inductive load e off v cc = 3600v, v ge = 15v, r g(on) = 30 , l s = 150nh, t j = 125c, inductive load v cc = 3600v, v ge = 15v, r g(on) = 30 , r g(off) = 300 , l s = 150nh, t j = 125c, inductive load QID6508001 dual igbt hvigbt module 85 amperes/6500 volts preliminary powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 2 information presented is based upon manufacturers testing and projected capabilities.this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
7 time, (s) transient thermal impedance characteristics 1.2 0.8 1.0 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 reverse recovery current, i rr , (amperes) emitter-collector voltage, v ec , (volts) free-wheel diode reverse recovery safe operating area (rrsoa) 275 0 220 170 110 55 0 2000 4000 6000 8000 normalized transient thermal impedance, z th(j-c') per unit base = r th(j-c) = 0.100 c/w (igbt) r th(j-c) = 0.175 c//w (fwdi) v cc 4500v, di/dt < 500a/ s, t j = 125c QID6508001 dual igbt hvigbt module 85 amperes/6500 volts preliminary powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 2 information presented is based upon manufacturers testing and projected capabilities.this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
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